IXTY1R4N120P

Specifications

Pin Sayısı

3

Configuration

Single

Transistor Polarity

N-Channel

Typical Gate To Source Charge Nc

4.4

Maximum Drain Source Resistance Mohm

13000@10V

Package Height

2.4(Max)

Vds Drainsource Breakdown Voltage

1.2 kV

Id Continuous Drain Current

1.4 A

Typical Reverse Transfer Capacitance Vds Pf

7.6@25V

Technology

Si

Rds On Drainsource Resistance

15 Ohms

Category

Power MOSFET

Maximum Pulsed Drain Current Tc25c A

3

Supplier Package

DPAK

Vgs Th Gatesource Threshold Voltage

4.5 V

Vgs Gatesource Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Typical Fall Time Ns

29

Typical Rise Time Ns

27

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Qg Gate Charge

24.8 nC

Parça Durumu

Active

Channel Type

N

Maximum Diode Forward Voltage V

1.5

Montaj Stili

SMD/SMT

Typical Turnoff Delay Time Ns

78

Maximum Idss Ua

5

Maximum Gate Threshold Voltage V

4.5

Kılıf / Paket

TO-252-3

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

86000

Typical Gate To Drain Charge Nc

12.8

Typical Reverse Recovery Time Ns

900

Typical Gate Charge10v Nc

24.8

Process Technology

Polar

Maximum Continuous Drain Current A

1.4

Mounting

Surface Mount

Maximum Gate Source Voltage V

±30

Minimum Gate Threshold Voltage V

2.5