IXTY1N80P-TRL

Specifications

Eu Rohs

Compliant

Parça Durumu

Active

Package Length

6.73(Max)

Pd Power Dissipation

42 W

Typical Turnoff Delay Time

58 ns

Ppap

No

Eccn Us

EAR99

Vgs Gatesource Voltage

30 V

Rise Time

18 ns

Typical Rise Time Ns

18

Maximum Operating Temperature C

150

Typical Fall Time Ns

42

Minimum Operating Temperature

- 55 C

Typical Input Capacitance Vds Pf

250@25V

Maximum Drain Source Voltage V

800

Channel Mode

Enhancement

Automotive

No

Package Width

6.22(Max)

Supplier Package

DPAK

Tab

Tab

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

9@10V

Pcb Changed

2

Tip

Polar

Maximum Gate Source Voltage V

±20

Typical Turnon Delay Time

20 ns

Mounting

Surface Mount

Typical Turnon Delay Time Ns

20

Maks. Çalışma Sıcaklığı

+ 150 C

Category

Power MOSFET

Typical Gate Charge10v Nc

9

Technology

Si

Rds On Drainsource Resistance

14 Ohms

Maximum Continuous Drain Current A

1

Ambalaj

Tape and Reel

Minimum Operating Temperature C

-55

Package Height

2.4(Max)

Kılıf / Paket

TO-252-3

Maximum Drain Source Resistance Mohm

14000@10V

Maximum Power Dissipation Mw

42000