IXTY1N80P

Specifications

Automotive

No

Channel Mode

Enhancement

Maximum Drain Source Voltage V

800

Typical Input Capacitance Vds Pf

250@25V

Supplier Package

DPAK

Pcb Changed

2

Typical Gate Charge Vgs Nc

9@10V

Number Of Elements Per Chip

1

Tab

Tab

Package Width

6.22(Max)

Mounting

Surface Mount

Maximum Gate Source Voltage V

±20

Category

Power MOSFET

Typical Turnon Delay Time Ns

20

Eu Rohs

Compliant

Parça Durumu

Active

Package Length

6.73(Max)

Ppap

No

Number Of Channels

1 Channel

Typical Rise Time Ns

18

Maximum Operating Temperature C

150

Typical Fall Time Ns

42

Configuration

Single

Typical Turnoff Delay Time Ns

58

Transistor Polarity

N-Channel

Channel Type

N

Montaj Stili

SMD/SMT

Pin Sayısı

3

Rds On Drainsource Resistance

14 Ohms

Technology

Si

Seri

IXTY1N80

Typical Gate Charge10v Nc

9

Maximum Continuous Drain Current A

1

Minimum Operating Temperature C

-55

Package Height

2.4(Max)

Kılıf / Paket

TO-252-3

Maximum Drain Source Resistance Mohm

14000@10V

Vds Drainsource Breakdown Voltage

800 V

Id Continuous Drain Current

1 A

Maximum Power Dissipation Mw

42000