IXTY1N100P-TRL

Specifications

Maximum Drain Source Resistance Mohm

15000@10V

Kılıf / Paket

TO-252-3

Package Height

2.4(Max)

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

50000

Typical Gate Charge10v Nc

15.5

Rds On Drainsource Resistance

15 Ohms

Technology

Si

Maximum Continuous Drain Current A

1

Ambalaj

Tape and Reel

Channel Type

N

Pin Sayısı

3

Montaj Stili

SMD/SMT

Configuration

Single

Ürün Tipi

Discrete Semiconductor Modules

Typical Turnoff Delay Time Ns

55

Vgs Gatesource Voltage

20 V

Eccn Us

EAR99

Rise Time

26 ns

Minimum Operating Temperature

- 55 C

Typical Fall Time Ns

24

Maximum Operating Temperature C

150

Typical Rise Time Ns

26

Typical Turnoff Delay Time

55 ns

Pd Power Dissipation

50 W

Package Length

6.73(Max)

Parça Durumu

Active

Eu Rohs

Compliant

Ppap

No

Maximum Gate Source Voltage V

±20

Tip

Polar

Typical Turnon Delay Time

20 ns

Mounting

Surface Mount

Typical Turnon Delay Time Ns

20

Maks. Çalışma Sıcaklığı

+ 150 C

Category

Power MOSFET

Typical Input Capacitance Vds Pf

331@25V

Maximum Drain Source Voltage V

1000

Channel Mode

Enhancement

Automotive

No