IXTY1N100P

Specifications

Vgs Gatesource Voltage

- 20 V, + 20 V

Maximum Operating Temperature C

150

Typical Rise Time Ns

26

Number Of Channels

1 Channel

Minimum Operating Temperature

- 55 C

Typical Fall Time Ns

24

Pd Power Dissipation

50 W

Eu Rohs

Compliant with Exemption

Parça Durumu

Active

Package Length

6.73(Max)

Ppap

No

Mounting

Surface Mount

Maximum Gate Source Voltage V

±20

Maks. Çalışma Sıcaklığı

+ 150 C

Category

Power MOSFET

Typical Turnon Delay Time Ns

20

Automotive

No

Channel Mode

Enhancement

Typical Input Capacitance Vds Pf

331@25V

Maximum Drain Source Voltage V

1000

Supplier Package

DPAK

Typical Gate Charge Vgs Nc

15.5@10V

Pcb Changed

2

Number Of Elements Per Chip

1

Tab

Tab

Package Width

6.22(Max)

Minimum Operating Temperature C

-55

Package Height

2.4(Max)

Kılıf / Paket

TO-252-3

Maximum Drain Source Resistance Mohm

15000@10V

Vds Drainsource Breakdown Voltage

1 kV

Maximum Power Dissipation Mw

50000

Id Continuous Drain Current

1 A

Rds On Drainsource Resistance

15 Ohms

Technology

Si

Typical Gate Charge10v Nc

15.5

Maximum Continuous Drain Current A

1

Channel Type

N

Montaj Stili

SMD/SMT

Pin Sayısı

3