IXTY18P10T

Specifications

Qg Gate Charge

39 nC

Parça Durumu

Active

Minimum Operating Temperature

- 55 C

Typical Fall Time Ns

22

Typical Rise Time Ns

26

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Package Type

DPAK

Vgs Th Gatesource Threshold Voltage

4.5 V

Vgs Gatesource Voltage

- 15 V, + 15 V

Operating Temp Range

-55C to 150C

Supplier Package

DPAK

Rad Hardened

No

Category

Power MOSFET

Hts

8541.21.00.95

Tip

Power MOSFET

Rds On Drainsource Resistance

120 mOhms

Technology

Si

Id Continuous Drain Current

18 A

Maximum Drain Source Resistance Mohm

120@10V

Package Height

2.4(Max)

Vds Drainsource Breakdown Voltage

100 V

Transistor Polarity

P-Channel

Operating Temperature Classification

Military

Configuration

Single

Drainsource Onvolt

100(V)

Pin Sayısı

3

Gatesource Voltage Max

±15(V)

Ppap

No

Package Length

6.73(Max)

Eu Rohs

Compliant with Exemption

Pd Power Dissipation

83 W

Number Of Elements

1

Tab

Tab

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

39@10V

Continuous Drain Current

18(A)

Pcb Changed

2

Polarity

P

Package Width

6.22(Max)