IXTY15P15T

Specifications

Montaj Stili

SMD/SMT

Pin Sayısı

3

Channel Type

P

Transistor Polarity

P-Channel

Typical Turnoff Delay Time Ns

36

Maximum Idss Ua

10

Configuration

Single

Maximum Power Dissipation Mw

150000

Id Continuous Drain Current

15 A

Maximum Drain Source Resistance Mohm

240@10V

Maximum Gate Threshold Voltage V

4.5

Minimum Operating Temperature C

-55

Package Height

2.38(Max)

Kılıf / Paket

TO-252-3

Vds Drainsource Breakdown Voltage

150 V

Maximum Continuous Drain Current A

15

Rds On Drainsource Resistance

240 mOhms

Technology

Si

Typical Gate Charge10v Nc

48

Process Technology

TrenchP

Maximum Gate Source Leakage Current Na

50

Category

Power MOSFET

Typical Turnon Delay Time Ns

21

Mounting

Surface Mount

Maximum Gate Source Voltage V

±15

Tab

Tab

Number Of Elements Per Chip

1

Pcb Changed

2

Typical Gate Charge Vgs Nc

48@10V

Supplier Package

DPAK

Package Width

6.22(Max)

Channel Mode

Enhancement

Automotive

No

Maximum Drain Source Voltage V

150

Typical Input Capacitance Vds Pf

3650@25V

Typical Fall Time Ns

11

Maximum Operating Temperature C

150

Typical Rise Time Ns

14

Eccn Us

EAR99

Ppap

No