IXTY10P15T

Specifications

Id Continuous Drain Current

10 A

Maximum Drain Source Resistance Mohm

350@10V

Package Height

2.4(Max)

Vds Drainsource Breakdown Voltage

150 V

Technology

Si

Rds On Drainsource Resistance

350 mOhms

Pin Sayısı

3

Transistor Polarity

P-Channel

Configuration

Single

Typical Fall Time Ns

12

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Typical Rise Time Ns

16

Vgs Th Gatesource Threshold Voltage

4.5 V

Vgs Gatesource Voltage

- 15 V, + 15 V

Eccn Us

EAR99

Qg Gate Charge

36 nC

Parça Durumu

Active

Category

Power MOSFET

Hts

8541.29.00.95

Supplier Package

DPAK

Maximum Power Dissipation Mw

83000

Maximum Gate Threshold Voltage V

4.5

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-252-3

Maximum Continuous Drain Current A

10

Typical Gate Charge10v Nc

36

Process Technology

TrenchFET

Montaj Stili

SMD/SMT

Channel Type

P

Typical Turnoff Delay Time Ns

40

Maximum Idss Ua

3

Ppap

No

Package Length

6.73(Max)

Eu Rohs

Compliant

Pd Power Dissipation

83 W

Maximum Gate Source Leakage Current Na

50

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Turnon Delay Time Ns

19