IXTY08N100P

Specifications

Automotive

No

Channel Mode

Enhancement

Maximum Drain Source Voltage V

1000

Typical Input Capacitance Vds Pf

240@25V

Supplier Package

DPAK

Tab

Tab

Number Of Elements Per Chip

1

Pcb Changed

2

Typical Gate Charge Vgs Nc

11.3@10V

Package Width

6.22(Max)

Mounting

Surface Mount

Maximum Gate Source Voltage V

±20

Hts

8541.29.00.95

Maks. Çalışma Sıcaklığı

+ 150 C

Category

Power MOSFET

Typical Turnon Delay Time Ns

19

Qg Gate Charge

11.3 nC

Pd Power Dissipation

42 W

Package Length

6.73(Max)

Parça Durumu

Active

Eu Rohs

Compliant

Ppap

No

Vgs Gatesource Voltage

- 20 V, + 20 V

Vgs Th Gatesource Threshold Voltage

2 V

Number Of Channels

1 Channel

Typical Rise Time Ns

37

Maximum Operating Temperature C

150

Typical Fall Time Ns

34

Minimum Operating Temperature

- 55 C

Configuration

Single

Typical Turnoff Delay Time Ns

35

Transistor Polarity

N-Channel

Channel Type

N

Montaj Stili

SMD/SMT

Pin Sayısı

3

Rds On Drainsource Resistance

20 Ohms

Technology

Si

Typical Gate Charge10v Nc

11.3

Maximum Continuous Drain Current A

0.8

Kılıf / Paket

TO-252-3