IXTY01N100

Specifications

Typical Input Capacitance Vds Pf

54@25V

Maximum Drain Source Voltage V

1000

Automotive

No

Channel Mode

Enhancement

Polarity

N

Package Width

6.22(Max)

Pcb Changed

2

Continuous Drain Current

0.1(A)

Typical Gate Charge Vgs Nc

6.9@10V

Number Of Elements Per Chip

1

Tab

Tab

Maximum Gate Source Voltage V

±20

Mounting

Surface Mount

Typical Turnon Delay Time Ns

12

Continuous Drain Current Id

100mA

Maks. Çalışma Sıcaklığı

+ 150 C

Package Length

6.73(Max)

Eu Rohs

Compliant with Exemption

Pd Power Dissipation

25 W

Ppap

No

Gatesource Voltage Max

±20(V)

Number Of Elements

1

Typical Turnoff Delay Time Ns

28

Channel Type

N

Power Dissipation

25(W)

Montaj Stili

SMD/SMT

Typical Gate Charge10v Nc

6.9

Seri

IXTY01N100

Maximum Continuous Drain Current A

0.1

Material

Si

Kılıf / Paket

TO-252-3

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

25000

Rad Hardened

No

Operating Temp Range

-55C to 150C

Supplier Package

TO-252AA

Hts

8541.10.00.80

Tip

Power MOSFET

Category

Power MOSFET

Parça Durumu

Active