IXTX90P20P

Specifications

Typical Turnoff Delay Time Ns

89

Svhc

Yes

Montaj Stili

Through Hole

Channel Type

P

Power Dissipation

890W

Maximum Continuous Drain Current A

90

Typical Gate Charge10v Nc

205

Maximum Power Dissipation Mw

890000

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-247-3

Pcb Changed

3

Typical Gate Charge Vgs Nc

205@10V

Number Of Elements Per Chip

1

Tab

Tab

Package Width

5.21(Max)

Automotive

No

Channel Mode

Enhancement

Typical Input Capacitance Vds Pf

12000@25V

Maximum Drain Source Voltage V

200

Continuous Drain Current Id

90A

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Turnon Delay Time Ns

32

Mounting

Through Hole

Maximum Gate Source Voltage V

±20

Ppap

No

Pd Power Dissipation

890 W

Eu Rohs

Compliant with Exemption

Package Length

16.13(Max)

Transistor Polarity

P-Channel

Configuration

Single

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Technology

Si

Rds On Drainsource Resistance

44 mOhms

Id Continuous Drain Current

90 A

Maximum Drain Source Resistance Mohm

44@10V

Package Height

21.34(Max)

Vds Drainsource Breakdown Voltage

200 V

Supplier Package

PLUS 247

Category

Power MOSFET