IXTX60N50L2

Specifications

Pin Sayısı

3

Transistor Polarity

N-Channel

Configuration

Single

Svhc Exceeds Threshold

Yes

Id Continuous Drain Current

60 A

Vds Drainsource Breakdown Voltage

500 V

Package Height

21.34(Max)

Maximum Drain Source Resistance Mohm

100@10V

Technology

Si

Rds On Drainsource Resistance

100 mOhms

Category

Power MOSFET

Hts

8541.29.00.95

Supplier Package

PLUS 247

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Typical Rise Time Ns

40

Typical Fall Time Ns

38

Minimum Operating Temperature

- 55 C

Eccn Us

EAR99

Vgs Gatesource Voltage

- 30 V, + 30 V

Vgs Th Gatesource Threshold Voltage

2.5 V

Parça Durumu

Active

Qg Gate Charge

610 nC

Montaj Stili

Through Hole

Channel Type

N

Svhc

Yes

Typical Turnoff Delay Time Ns

165

Maximum Power Dissipation Mw

960000

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-247-3

Maximum Continuous Drain Current A

60

Typical Gate Charge10v Nc

610

Typical Turnon Delay Time Ns

40

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Gate Source Voltage V

±30

Mounting

Through Hole

Package Width

5.21(Max)

Tab

Tab

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

610@10V