IXTX600N04T2

Specifications

Package Width

5.21(Max)

Tab

Tab

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

590@10V

Pcb Changed

3

Supplier Package

PLUS 247

Maximum Drain Source Voltage V

40

Typical Input Capacitance Vds Pf

40@25V

Channel Mode

Enhancement

Automotive

No

Typical Turnon Delay Time Ns

40

Category

Power MOSFET

Maximum Gate Source Voltage V

±20

Mounting

Through Hole

Ppap

No

Eu Rohs

Compliant with Exemption

Parça Durumu

Active

Package Length

16.13(Max)

Typical Fall Time Ns

250

Maximum Operating Temperature C

175

Typical Rise Time Ns

20

Eccn Us

EAR99

Svhc

Yes

Typical Turnoff Delay Time Ns

90

Configuration

Single

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Channel Type

N

Maximum Continuous Drain Current A

600

Typical Gate Charge10v Nc

590

Process Technology

GigaMOS

Maximum Power Dissipation Mw

1250000

Maximum Drain Source Resistance Mohm

1.5@10V

Package Height

21.34(Max)

Minimum Operating Temperature C

-55