IXTX210P10T

Specifications

Ppap

No

Eu Rohs

Compliant with Exemption

Parça Durumu

Active

Package Length

16.13(Max)

Maximum Operating Temperature C

150

Typical Rise Time Ns

98

Typical Fall Time Ns

55

Package Width

5.21(Max)

Supplier Package

PLUS 247

Typical Gate Charge Vgs Nc

740@10V

Pcb Changed

3

Number Of Elements Per Chip

1

Tab

Tab

Maximum Drain Source Voltage V

100

Typical Input Capacitance Vds Pf

69500@25V

Channel Mode

Enhancement

Automotive

No

Typical Turnon Delay Time Ns

90

Category

Power MOSFET

Maximum Gate Source Leakage Current Na

200

Maximum Gate Source Voltage V

±15

Mounting

Through Hole

Maximum Continuous Drain Current A

210

Process Technology

TrenchFET

Typical Gate Charge10v Nc

740

Maximum Power Dissipation Mw

1040000

Minimum Operating Temperature C

-55

Package Height

21.34(Max)

Maximum Drain Source Resistance Mohm

7.5@10V

Maximum Gate Threshold Voltage V

4.5

Svhc

Yes

Maximum Idss Ua

25

Typical Turnoff Delay Time Ns

165

Configuration

Single

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Channel Type

P