IXTX20N150

Specifications

Typical Gate Charge10v Nc

215

Maximum Continuous Drain Current A

20

Minimum Operating Temperature C

-55

Package Height

21.34(Max)

Maximum Gate Threshold Voltage V

4.5

Maximum Drain Source Resistance Mohm

1000@10V

Maximum Power Dissipation Mw

1250000

Svhc Exceeds Threshold

Yes

Configuration

Single

Typical Turnoff Delay Time Ns

80

Svhc

Yes

Maximum Idss Ua

50

Power Dissipation

1.25kW

Channel Type

N

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Parça Durumu

Active

Package Length

16.13(Max)

Ppap

No

Eccn Us

EAR99

Maximum Operating Temperature C

150

Typical Rise Time Ns

30

Typical Fall Time Ns

33

Channel Mode

Enhancement

Automotive

No

Typical Input Capacitance Vds Pf

7800@25V

Maximum Drain Source Voltage V

1500

Supplier Package

PLUS 247

Tab

Tab

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

215@10V

Pcb Changed

3

Package Width

5.21(Max)

Mounting

Through Hole

Maximum Gate Source Voltage V

±30

Hts

8541.29.00.95

Continuous Drain Current Id

20A

Category

Power MOSFET

Maximum Gate Source Leakage Current Na

200

Typical Turnon Delay Time Ns

35