IXTX200N10L2

Specifications

Typical Rise Time Ns

225

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Minimum Operating Temperature

- 55 C

Typical Fall Time Ns

27

Eccn Us

EAR99

Vgs Th Gatesource Threshold Voltage

4.5 V

Vgs Gatesource Voltage

- 20 V, + 20 V

Parça Durumu

Active

Qg Gate Charge

540 nC

Maximum Pulsed Drain Current Tc25c A

500

Category

Power MOSFET

Typical Reverse Recovery Charge Nc

3000

Hts

8541.29.00.95

Supplier Package

ISOPLUS 247

Typical Reverse Transfer Capacitance Vds Pf

610

Id Continuous Drain Current

200 A

Vds Drainsource Breakdown Voltage

100 V

Package Height

21.34(Max)

Maximum Drain Source Resistance Mohm

11@10V

Technology

Si

Rds On Drainsource Resistance

11 mOhms

Pin Sayısı

3

Typical Gate To Source Charge Nc

115

Transistor Polarity

N-Channel

Configuration

Single

Svhc Exceeds Threshold

Yes

Typical Gate Plateau Voltage V

6

Maximum Positive Gate Source Voltage V

20

Ppap

No

Pd Power Dissipation

1.04 kW

Eu Rohs

Compliant with Exemption

Package Length

16.13(Max)

Operating Junction Temperature C

-55 to 150

Typical Turnon Delay Time Ns

40

Continuous Drain Current Id

200A

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Gate Threshold Voltage V

2

Maximum Gate Source Leakage Current Na

200

Maximum Gate Source Voltage V

±20