IXTX120P20T

Specifications

Tab

Tab

Pcb Changed

3

Typical Gate Charge Vgs Nc

740@10V

Number Of Elements Per Chip

1

Supplier Package

PLUS 247

Package Width

5.21(Max)

Channel Mode

Enhancement

Automotive

No

Typical Input Capacitance Vds Pf

73000@25V

Maximum Drain Source Voltage V

200

Maximum Gate Source Leakage Current Na

200

Category

Power MOSFET

Typical Turnon Delay Time Ns

90

Mounting

Through Hole

Maximum Gate Source Voltage V

±15

Ppap

No

Package Length

16.13(Max)

Parça Durumu

Active

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

50

Typical Rise Time Ns

85

Maximum Operating Temperature C

150

Typical Turnoff Delay Time Ns

200

Maximum Idss Ua

25

Svhc

Yes

Svhc Exceeds Threshold

Yes

Configuration

Single

Pin Sayısı

3

Channel Type

P

Maximum Continuous Drain Current A

120

Typical Gate Charge10v Nc

740

Process Technology

TrenchFET

Maximum Power Dissipation Mw

1040000

Maximum Drain Source Resistance Mohm

30@10V

Maximum Gate Threshold Voltage V

4.5

Minimum Operating Temperature C

-55

Package Height

21.34(Max)