IXTX102N65X2

Specifications

Typical Input Capacitance Vds Pf

10900@25V

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Seri

X2-Class

Maximum Gate Threshold Voltage V

5

Qg Gate Charge

152 nC

Maximum Power Dissipation Mw

1040000

Supplier Package

PLUS 247

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Pd Power Dissipation

1.04 kW

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Vds Drainsource Breakdown Voltage

650 V

Mounting

Through Hole

Pin Sayısı

3

Number Of Elements Per Chip

1

Id Continuous Drain Current

102 A

Typical Gate Charge10v Nc

152

Kılıf / Paket

TO-247-3

Vgs Gatesource Voltage

- 30 V, + 30 V

Maximum Drain Source Voltage V

650

Maximum Drain Source Resistance Mohm

30@10V

Typical Fall Time Ns

11

Svhc Exceeds Threshold

Yes

Typical Turnoff Delay Time Ns

67

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

3 V

Maximum Continuous Drain Current A

102

Maximum Idss Ua

25

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Polarity

N-Channel

Package Height

21.34(Max)

Package Length

16.13(Max)

Parça Durumu

Active

Package Width

5.21(Max)

Svhc

Yes