IXTT8P50

Specifications

Maximum Drain Source Voltage V

500

Pcb Changed

2

Rds On Drainsource Resistance

1.2 Ohms

Svhc Exceeds Threshold

Yes

Configuration

Single

Maximum Drain Source Resistance Mohm

1200@10V

Typical Gate Charge Vgs Nc

130@10V

Typical Fall Time Ns

35

Id Continuous Drain Current

8 A

Typical Gate Charge10v Nc

130

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-268-3

Typical Rise Time Ns

27

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

500 V

Pin Sayısı

3

Ppap

No

Mounting

Surface Mount

Montaj Stili

SMD/SMT

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

33

Number Of Channels

1 Channel

Svhc

Yes

Maximum Operating Temperature C

150

Pd Power Dissipation

180 W

Transistor Polarity

P-Channel

Package Width

14(Max)

Parça Durumu

Active

Package Length

16.05(Max)

Package Height

5.1(Max)

Maximum Power Dissipation Mw

180000

Maximum Continuous Drain Current A

8

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Supplier Package

TO-268

Typical Turnoff Delay Time Ns

35