IXTT88N30P

Specifications

Maximum Drain Source Voltage V

300

Pcb Changed

2

Power Dissipation

600W

Maximum Drain Source Resistance Mohm

40@10V

Typical Gate Charge Vgs Nc

180@10V

Typical Fall Time Ns

25

Configuration

Single

Svhc Exceeds Threshold

Yes

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

180

Typical Rise Time Ns

24

Maximum Gate Source Voltage V

±20

Mounting

Surface Mount

Pin Sayısı

3

Ppap

No

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

25

Category

Power MOSFET

Maximum Operating Temperature C

150

Process Technology

PolarHT

Svhc

Yes

Continuous Drain Current Id

88A

Eccn Us

EAR99

Package Height

5.1(Max)

Package Length

16.05(Max)

Parça Durumu

Active

Package Width

14(Max)

Hts

8541.29.00.95

Maximum Continuous Drain Current A

88

Maximum Power Dissipation Mw

600000

Supplier Package

TO-268

Automotive

No

Typical Turnoff Delay Time Ns

96

Typical Input Capacitance Vds Pf

6300@25V

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Channel Type

N