IXTT82N25P

Specifications

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

29

Category

Power MOSFET

Maximum Gate Source Voltage V

±20

Mounting

Surface Mount

Pin Sayısı

3

Ppap

No

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

142

Typical Rise Time Ns

20

Maximum Drain Source Voltage V

250

Pcb Changed

2

Typical Gate Charge Vgs Nc

142@10V

Maximum Drain Source Resistance Mohm

38@10V

Typical Fall Time Ns

22

Configuration

Single

Svhc Exceeds Threshold

Yes

Typical Turnoff Delay Time Ns

78

Typical Input Capacitance Vds Pf

4800@25V

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Channel Type

N

Maximum Continuous Drain Current A

82

Maximum Power Dissipation Mw

500000

Supplier Package

TO-268

Automotive

No

Package Length

16.05(Max)

Package Height

5.1(Max)

Package Width

14(Max)

Parça Durumu

Active

Maximum Operating Temperature C

150

Svhc

Yes