IXTT80N20L

Specifications

Package Length

16.05(Max)

Package Height

5.1(Max)

Parça Durumu

Active

Package Width

14(Max)

Eccn Us

EAR99

Operating Junction Temperature C

150

Maximum Operating Temperature C

150

Svhc

Yes

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Channel Mode

Enhancement

Typical Input Capacitance Vds Pf

6160@25V

Typical Turnoff Delay Time Ns

72

Supplier Package

TO-268

Automotive

No

Maximum Continuous Drain Current A

80

Hts

8541.29.00.95

Maximum Power Dissipation Mw

520000

Maximum Gate Threshold Voltage V

4

Maximum Idss Ua

25

Typical Rise Time Ns

44

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

180

Typical Fall Time Ns

29

Typical Gate Charge Vgs Nc

180@10V

Maximum Drain Source Resistance Mohm

32@10V

Configuration

Single

Svhc Exceeds Threshold

Yes

Pcb Changed

2

Maximum Drain Source Voltage V

200

Typical Turnon Delay Time Ns

29

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant with Exemption

Mounting

Surface Mount

Ppap

No

Pin Sayısı

3

Maximum Gate Source Voltage V

±20