IXTT6N120

Specifications

Svhc Exceeds Threshold

Yes

Configuration

Single

Typical Fall Time Ns

18

Typical Gate Charge Vgs Nc

56@10V

Maximum Drain Source Resistance Mohm

2600@10V

Pcb Changed

2

Maximum Drain Source Voltage V

1200

Typical Rise Time Ns

33

Typical Gate Charge10v Nc

56

Number Of Elements Per Chip

1

Ppap

No

Pin Sayısı

3

Mounting

Surface Mount

Maximum Gate Source Voltage V

±20

Category

Power MOSFET

Typical Turnon Delay Time Ns

28

Eu Rohs

Compliant with Exemption

Tab

Tab

Svhc

Yes

Maximum Operating Temperature C

150

Package Width

14(Max)

Parça Durumu

Active

Package Length

16.05(Max)

Package Height

5.1(Max)

Eccn Us

EAR99

Automotive

No

Supplier Package

TO-268

Maximum Power Dissipation Mw

300000

Maximum Continuous Drain Current A

6

Hts

8541.29.00.95

Material

Si

Channel Mode

Enhancement

Channel Type

N

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

1950@25V

Typical Turnoff Delay Time Ns

42