IXTT68P20T

Specifications

Pd Power Dissipation

568 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Channel Type

P

Channel Mode

Enhancement

Technology

Si

Seri

IXTT68P20

Maximum Gate Source Leakage Current Na

100

Supplier Package

TO-268

Maximum Gate Threshold Voltage V

4

Maximum Power Dissipation Mw

568000

Qg Gate Charge

380 nC

Vgs Gatesource Voltage

- 15 V, + 15 V

Kılıf / Paket

TO-268-3

Id Continuous Drain Current

68 A

Typical Gate Charge10v Nc

380

Number Of Elements Per Chip

1

Svhc Exceeds Threshold

Yes

Maximum Drain Source Resistance Mohm

55@10V

Typical Gate Charge Vgs Nc

380@10V

Typical Fall Time Ns

18

Maximum Drain Source Voltage V

200

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Mounting

Surface Mount

Vds Drainsource Breakdown Voltage

200 V

Parça Durumu

Active

Package Width

14(Max)

Package Length

16.05(Max)

Package Height

5.1(Max)

Continuous Drain Current Id

68A

Eccn Us

EAR99

Transistor Polarity

P-Channel

Svhc

Yes

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

4 V

Typical Turnoff Delay Time Ns

115

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C