IXTT52N30P

Specifications

Svhc Exceeds Threshold

Yes

Typical Fall Time Ns

20

Maximum Drain Source Resistance Mohm

73@10V

Typical Gate Charge Vgs Nc

110@10V

Maximum Drain Source Voltage V

300

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-268-3

Typical Gate Charge10v Nc

110

Id Continuous Drain Current

52 A

Number Of Elements Per Chip

1

Pin Sayısı

3

Mounting

Surface Mount

Vds Drainsource Breakdown Voltage

300 V

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Pd Power Dissipation

400 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Supplier Package

TO-268

Maximum Power Dissipation Mw

400000

Maximum Gate Threshold Voltage V

5

Technology

Si

Channel Mode

Enhancement

Channel Type

N

Maximum Gate Source Leakage Current Na

100

Typical Input Capacitance Vds Pf

3490@25V

Configuration

Single

Pcb Changed

2

Rds On Drainsource Resistance

66 mOhms

Typical Rise Time Ns

22

Ppap

No

Montaj Stili

SMD/SMT

Maximum Gate Source Voltage V

±20

Typical Turnon Delay Time Ns

24

Minimum Operating Temperature

- 55 C

Tab

Tab

Svhc

Yes

Parça Durumu

Active

Package Width

14(Max)

Package Length

16.05(Max)