IXTT500N04T2

Specifications

Parça Durumu

Active

Package Width

14(Max)

Package Height

5.1(Max)

Package Length

16.05(Max)

Transistor Polarity

N-Channel

Pd Power Dissipation

1 kW

Svhc

Yes

Maximum Operating Temperature C

175

Channel Mode

Enhancement

Technology

Si

Channel Type

N

Vgs Th Gatesource Threshold Voltage

3.5 V

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

25000@25V

Typical Turnoff Delay Time Ns

68

Automotive

No

Maks. Çalışma Sıcaklığı

+ 175 C

Supplier Package

TO-268

Qg Gate Charge

405 nC

Maximum Power Dissipation Mw

1000000

Maximum Continuous Drain Current A

500

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-268-3

Typical Rise Time Ns

16

Typical Gate Charge10v Nc

405

Id Continuous Drain Current

500 A

Number Of Elements Per Chip

1

Configuration

Single

Svhc Exceeds Threshold

Yes

Typical Fall Time Ns

44

Maximum Drain Source Resistance Mohm

1.6@10V

Typical Gate Charge Vgs Nc

405@10V

Rds On Drainsource Resistance

1.6 mOhms

Pcb Changed

2

Maximum Drain Source Voltage V

40

Category

Power MOSFET

Typical Turnon Delay Time Ns

37

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Tab

Tab