IXTT4N150HV-TRL

Specifications

Typical Turnoff Delay Time Ns

42

Vgs Th Gatesource Threshold Voltage

2.5 V

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

4

Maximum Idss Ua

10

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Polarity

N-Channel

Eccn Us

EAR99

Package Length

16.05(Max)

Package Height

5.1(Max)

Parça Durumu

Active

Package Width

14(Max)

Ambalaj

Tape and Reel

Tab

Tab

Minimum Operating Temperature

- 55 C

Typical Turnon Delay Time Ns

19

Maximum Gate Source Voltage V

±30

Montaj Stili

SMD/SMT

Ppap

No

Typical Rise Time Ns

23

Pcb Changed

2

Rds On Drainsource Resistance

6 Ohms

Configuration

Single

Typical Input Capacitance Vds Pf

1576@25V

Maximum Gate Source Leakage Current Na

100

Technology

Si

Channel Mode

Enhancement

Channel Type

N

Qg Gate Charge

44.5 nC

Maximum Power Dissipation Mw

280000

Maximum Gate Threshold Voltage V

5

Supplier Package

TO-268HV

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Pd Power Dissipation

280 W

Eu Rohs

Compliant

Category

Power MOSFET

Vds Drainsource Breakdown Voltage

1.5 kV

Mounting

Surface Mount