IXTT4N150HV

Specifications

Montaj Stili

SMD/SMT

Ppap

No

Vds Drainsource Breakdown Voltage

1.5 kV

Maximum Gate Source Voltage V

±30

Typical Turnon Delay Time Ns

19

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Typical Fall Time Ns

22

Maximum Drain Source Resistance Mohm

6000@10V

Typical Gate Charge Vgs Nc

44.5@10V

Configuration

Single

Svhc Exceeds Threshold

Yes

Rds On Drainsource Resistance

6 Ohms

Maximum Drain Source Voltage V

1500

Kılıf / Paket

TO-268-3

Typical Rise Time Ns

23

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

44.5

Id Continuous Drain Current

4 A

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Continuous Drain Current A

4

Qg Gate Charge

375 nC

Maximum Power Dissipation Mw

280000

Maximum Idss Ua

10

Maximum Gate Threshold Voltage V

5

Vgs Th Gatesource Threshold Voltage

2.5 V

Maximum Gate Source Leakage Current Na

100

Minimum Operating Temperature C

-55

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Typical Input Capacitance Vds Pf

1576@25V

Typical Turnoff Delay Time Ns

42

Pd Power Dissipation

280 W

Maximum Operating Temperature C

150

Svhc

Yes

Number Of Channels

1 Channel