IXTT30N50L2

Specifications

Typical Input Capacitance Vds Pf

8100@25V

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Maximum Gate Threshold Voltage V

4.5

Maximum Power Dissipation Mw

400000

Qg Gate Charge

240 nC

Supplier Package

TO-268

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Pd Power Dissipation

400 W

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Vds Drainsource Breakdown Voltage

500 V

Mounting

Surface Mount

Pin Sayısı

3

Number Of Elements Per Chip

1

Id Continuous Drain Current

30 A

Typical Gate Charge10v Nc

240

Kılıf / Paket

TO-268-3

Vgs Gatesource Voltage

- 20 V, + 20 V

Maximum Drain Source Voltage V

500

Typical Gate Charge Vgs Nc

240@10V

Maximum Drain Source Resistance Mohm

215@10V

Typical Fall Time Ns

40

Svhc Exceeds Threshold

Yes

Typical Turnoff Delay Time Ns

94

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Maximum Continuous Drain Current A

30

Maximum Idss Ua

50

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Transistor Polarity

N-Channel

Package Height

5.1(Max)

Package Length

16.05(Max)

Package Width

14(Max)

Parça Durumu

Active

Svhc

Yes