IXTT26N60P

Specifications

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

72

Id Continuous Drain Current

26 A

Typical Rise Time Ns

27

Kılıf / Paket

TO-268-3

Vgs Gatesource Voltage

- 30 V, + 30 V

Pcb Changed

2

Rds On Drainsource Resistance

270 mOhms

Maximum Drain Source Voltage V

600

Typical Fall Time Ns

21

Typical Gate Charge Vgs Nc

72@10V

Maximum Drain Source Resistance Mohm

270@10V

Svhc Exceeds Threshold

Yes

Configuration

Single

Tab

Tab

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Typical Turnon Delay Time Ns

25

Category

Power MOSFET

Vds Drainsource Breakdown Voltage

600 V

Maximum Gate Source Voltage V

±30

Montaj Stili

SMD/SMT

Mounting

Surface Mount

Ppap

No

Pin Sayısı

3

Transistor Polarity

N-Channel

Package Length

16.05(Max)

Package Height

5.1(Max)

Package Width

14(Max)

Parça Durumu

Active

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Svhc

Yes

Pd Power Dissipation

460 W

Typical Input Capacitance Vds Pf

4150@25V

Typical Turnoff Delay Time Ns

75

Minimum Operating Temperature C

-55

Channel Type

N

Channel Mode

Enhancement

Technology

Si