IXTT1N450HV

Specifications

Vds Drainsource Breakdown Voltage

4.5 kV

Polarity

N

Pin Sayısı

3

Mounting

Surface Mount

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Maximum Drain Source Voltage V

4500

Tip

Power MOSFET

Drainsource Onvolt

4500(V)

Svhc Exceeds Threshold

Yes

Maximum Drain Source Resistance Mohm

80000@10V

Typical Gate Charge Vgs Nc

40@10V

Typical Fall Time Ns

127

Id Continuous Drain Current

3 A

Typical Gate Charge10v Nc

40

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-268-3

Maximum Gate Threshold Voltage V

6

Maximum Power Dissipation Mw

520000

Qg Gate Charge

46 nC

Supplier Package

TO-268

Rad Hardened

No

Typical Input Capacitance Vds Pf

1730@25V

Technology

Si

Channel Mode

Enhancement

Channel Type

N

Seri

IXTT1N450

Maximum Gate Source Leakage Current Na

100

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Pd Power Dissipation

520 W

Maximum Gate Source Voltage V

±20

Gatesource Voltage Max

±20(V)

Operating Temperature Classification

Military

Ppap

No

Number Of Elements

1

Montaj Stili

SMD/SMT

Minimum Operating Temperature

- 55 C

Tab

Tab