IXTT1N300P3HV

Specifications

Vgs Th Gatesource Threshold Voltage

2 V

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Typical Input Capacitance Vds Pf

895@25V

Typical Turnoff Delay Time Ns

78

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Maximum Continuous Drain Current A

1

Qg Gate Charge

30.6 nC

Maximum Power Dissipation Mw

195000

Maximum Gate Threshold Voltage V

4

Maximum Idss Ua

25

Parça Durumu

Active

Transistor Polarity

N-Channel

Continuous Drain Current Id

1A

Pd Power Dissipation

195 W

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Svhc

Yes

Typical Turnon Delay Time Ns

22

Category

Power MOSFET

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Montaj Stili

SMD/SMT

Ppap

No

Vds Drainsource Breakdown Voltage

3 kV

Maximum Gate Source Voltage V

±20

Typical Rise Time Ns

35

Kılıf / Paket

TO-268-3

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

30.6

Id Continuous Drain Current

1 A

Typical Fall Time Ns

60

Typical Gate Charge Vgs Nc

30.6@10V

Maximum Drain Source Resistance Mohm

50000@10V

Svhc Exceeds Threshold

Yes