IXTT16P60P

Specifications

Power Dissipation

460W

Pcb Changed

2

Maximum Drain Source Voltage V

600

Svhc Exceeds Threshold

Yes

Configuration

Single

Typical Fall Time Ns

38

Typical Gate Charge Vgs Nc

92@10V

Maximum Drain Source Resistance Mohm

720@10V

Typical Gate Charge10v Nc

92

Number Of Elements Per Chip

1

Typical Rise Time Ns

25

Maximum Gate Source Voltage V

±20

Ppap

No

Pin Sayısı

3

Mounting

Surface Mount

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

29

Svhc

Yes

Process Technology

PolarP

Maximum Operating Temperature C

150

Eccn Us

EAR99

Continuous Drain Current Id

16A

Package Width

14(Max)

Parça Durumu

Active

Package Length

16.05(Max)

Package Height

5.1(Max)

Maximum Power Dissipation Mw

460000

Maximum Continuous Drain Current A

16

Hts

8541.29.00.95

Automotive

No

Supplier Package

TO-268

Typical Input Capacitance Vds Pf

5120@25V

Typical Turnoff Delay Time Ns

60

Channel Type

P

Channel Mode

Enhancement

Minimum Operating Temperature C

-55