IXTT16N50D2

Specifications

Transistor Polarity

N-Channel

Package Width

14(Max)

Parça Durumu

Active

Package Length

16.05(Max)

Package Height

5.1(Max)

Number Of Channels

1 Channel

Svhc

Yes

Maximum Operating Temperature C

150

Pd Power Dissipation

695 W

Typical Input Capacitance Vds Pf

5250@25V

Typical Turnoff Delay Time Ns

203

Seri

IXTT16N50

Channel Type

N

Channel Mode

Depletion

Technology

Si

Vgs Th Gatesource Threshold Voltage

2 V

Minimum Operating Temperature C

-55

Qg Gate Charge

199 nC

Maximum Power Dissipation Mw

695000

Hts

8541.29.00.95

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Supplier Package

TO-268

Typical Gate Charge10v Nc

199

Id Continuous Drain Current

16 A

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Rise Time Ns

173

Kılıf / Paket

TO-268-3

Pcb Changed

2

Rds On Drainsource Resistance

300 mOhms

Maximum Drain Source Voltage V

500

Svhc Exceeds Threshold

Yes

Configuration

Single

Typical Fall Time Ns

220

Typical Gate Charge Vgs Nc

199@5V

Maximum Drain Source Resistance Mohm

300@0V

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Tab

Tab