IXTT12N150HV-TRL

Specifications

Mounting

Surface Mount

Montaj Stili

SMD/SMT

Pin Sayısı

3

Ppap

No

Maximum Gate Source Voltage V

±30

Vds Drainsource Breakdown Voltage

1.5 kV

Typical Turnon Delay Time Ns

26

Category

Power MOSFET

Tab

Tab

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant

Typical Gate Charge Vgs Nc

106@10V

Maximum Drain Source Resistance Mohm

2200@10V

Typical Fall Time Ns

14

Configuration

Single

Maximum Drain Source Voltage V

1500

Rds On Drainsource Resistance

2.2 Ohms

Pcb Changed

2

Typical Rise Time Ns

16

Kılıf / Paket

TO-268HV-3

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Elements Per Chip

1

Id Continuous Drain Current

12 A

Typical Gate Charge10v Nc

106

Supplier Package

TO-268HV

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Maximum Continuous Drain Current A

12

Qg Gate Charge

106 nC

Maximum Power Dissipation Mw

890000

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Typical Turnoff Delay Time Ns

5

Typical Input Capacitance Vds Pf

3720@25V

Pd Power Dissipation

890 W

Ambalaj

Tape and Reel

Maximum Operating Temperature C

150