IXTT11P50-TRL

Specifications

Maximum Gate Source Voltage V

±20

Ppap

No

Tab

Tab

Typical Gate To Drain Charge Nc

55

Typical Turnon Delay Time Ns

33

Typical Reverse Recovery Time Ns

500

Pcb Changed

2

Configuration

Single

Typical Rise Time Ns

27

Hts

8541.29.00.95

Typical Gate To Source Charge Nc

30

Maximum Continuous Drain Current A

11

Maximum Idss Ua

200

Automotive

No

Maximum Positive Gate Source Voltage V

20

Typical Turnoff Delay Time Ns

35

Typical Gate Plateau Voltage V

5.3

Minimum Operating Temperature C

-55

Operating Junction Temperature C

-55 to 150

Ambalaj

Tape and Reel

Eccn Us

EAR99

Package Length

16.05(Max)

Package Height

5.1(Max)

Parça Durumu

Active

Package Width

14(Max)

Maximum Pulsed Drain Current Tc25c A

44

Mounting

Surface Mount

Pin Sayısı

3

Eu Rohs

Compliant

Category

Power MOSFET

Maximum Drain Source Voltage V

500

Typical Output Capacitance Pf

500

Maximum Drain Source Resistance Mohm

750@10V

Typical Gate Charge Vgs Nc

130@10V

Typical Fall Time Ns

35

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

130

Minimum Gate Threshold Voltage V

3

Maximum Gate Threshold Voltage V

5

Maximum Power Dissipation Mw

300000