IXTT11P50

Specifications

Supplier Package

TO-268

Maximum Power Dissipation Mw

300000

Maximum Gate Threshold Voltage V

5

Maximum Gate Source Leakage Current Na

100

Material

Si

Channel Type

P

Channel Mode

Enhancement

Typical Input Capacitance Vds Pf

4700@25V

Maximum Diode Forward Voltage V

3

Maximum Operating Temperature C

150

Typical Reverse Transfer Capacitance Vds Pf

187@25V

Mounting

Surface Mount

Pin Sayısı

3

Maximum Pulsed Drain Current Tc25c A

44

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

35

Typical Gate Charge Vgs Nc

130@10V

Maximum Drain Source Resistance Mohm

750@10V

Svhc Exceeds Threshold

Yes

Maximum Drain Source Voltage V

500

Typical Output Capacitance Pf

500

Minimum Gate Threshold Voltage V

3

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

130

Automotive

No

Maximum Continuous Drain Current A

11

Hts

8541.10.00.80

Typical Gate To Source Charge Nc

30

Maximum Idss Ua

200

Minimum Operating Temperature C

-55

Maximum Positive Gate Source Voltage V

20

Typical Turnoff Delay Time Ns

35

Typical Gate Plateau Voltage V

5.3

Operating Junction Temperature C

-55 to 150

Svhc

Yes

Package Length

16.05(Max)

Package Height

5.1(Max)

Package Width

14(Max)

Parça Durumu

Active