IXTT110N10L2

Specifications

Maximum Operating Temperature C

150

Channel Type

N

Channel Mode

Enhancement

Maximum Gate Source Leakage Current Na

100

Typical Input Capacitance Vds Pf

10500@25V

Supplier Package

TO-268

Rad Hardened

No

Maximum Power Dissipation Mw

600000

Maximum Gate Threshold Voltage V

4.5

Typical Gate Charge10v Nc

260

Number Of Elements Per Chip

1

Svhc Exceeds Threshold

Yes

Typical Fall Time Ns

24

Typical Gate Charge Vgs Nc

260@10V

Maximum Drain Source Resistance Mohm

18@10V

Drainsource Onvolt

100(V)

Tip

Power MOSFET

Maximum Drain Source Voltage V

100

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Mounting

Surface Mount

Polarity

N

Package Width

14(Max)

Parça Durumu

Active

Package Height

5.1(Max)

Package Length

16.05(Max)

Eccn Us

EAR99

Operating Temp Range

-55C to 150C

Continuous Drain Current Id

110A

Svhc

Yes

Package Type

TO-268

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

99

Automotive

No

Maximum Idss Ua

5

Maximum Continuous Drain Current A

110

Hts

8541.21.00.95

Typical Rise Time Ns

130

Configuration

Single