IXTR48P20P

Specifications

Ppap

No

Pin Sayısı

3

Montaj Stili

Through Hole

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

200 V

Maximum Gate Source Voltage V

±20

Category

Power MOSFET

Typical Turnon Delay Time Ns

30

Eu Rohs

Compliant with Exemption

Tab

Tab

Configuration

Single

Typical Fall Time Ns

27

Maximum Drain Source Resistance Mohm

93@10V

Typical Gate Charge Vgs Nc

103@10V

Rds On Drainsource Resistance

93 mOhms

Pcb Changed

3

Maximum Drain Source Voltage V

200

Typical Rise Time Ns

46

Kılıf / Paket

TO-247-3

Typical Gate Charge10v Nc

103

Id Continuous Drain Current

30 A

Number Of Elements Per Chip

1

Automotive

No

Supplier Package

ISOPLUS 247

Maximum Power Dissipation Mw

190000

Maximum Continuous Drain Current A

30

Material

Si

Channel Type

P

Channel Mode

Enhancement

Technology

Si

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

5400@25V

Typical Turnoff Delay Time Ns

67

Maximum Operating Temperature C

150

Package Width

5.21(Max)

Parça Durumu

Active

Package Height

21.34(Max)

Package Length

16.13(Max)

Transistor Polarity

P-Channel