IXTR32P60P

Specifications

Qg Gate Charge

196 nC

Maximum Power Dissipation Mw

310000

Maximum Continuous Drain Current A

18

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Supplier Package

ISOPLUS 247

Typical Turnoff Delay Time Ns

95

Typical Input Capacitance Vds Pf

11100@25V

Channel Type

P

Channel Mode

Enhancement

Technology

Si

Material

Si

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

4 V

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Pd Power Dissipation

310 W

Transistor Polarity

P-Channel

Package Width

5.21(Max)

Parça Durumu

Active

Package Length

16.13(Max)

Package Height

21.34(Max)

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

600 V

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Montaj Stili

Through Hole

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

37

Maximum Drain Source Voltage V

600

Pcb Changed

3

Rds On Drainsource Resistance

385 mOhms

Configuration

Single

Typical Gate Charge Vgs Nc

196@10V

Maximum Drain Source Resistance Mohm

385@10V

Typical Fall Time Ns

33