IXTR210P10T

Specifications

Typical Rise Time Ns

98

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

740

Typical Fall Time Ns

55

Maximum Drain Source Resistance Mohm

8@10V

Typical Gate Charge Vgs Nc

740@10V

Configuration

Single

Pcb Changed

3

Maximum Drain Source Voltage V

100

Typical Turnon Delay Time Ns

90

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant with Exemption

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Maximum Gate Source Voltage V

±15

Package Height

21.34(Max)

Package Length

16.13(Max)

Parça Durumu

Active

Package Width

5.21(Max)

Maximum Operating Temperature C

150

Process Technology

TrenchFET

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

100

Channel Type

P

Channel Mode

Enhancement

Typical Input Capacitance Vds Pf

69500@25V

Typical Turnoff Delay Time Ns

165

Supplier Package

ISOPLUS 247

Automotive

No

Maximum Continuous Drain Current A

195

Maximum Power Dissipation Mw

595000

Maximum Idss Ua

25

Maximum Gate Threshold Voltage V

4.5