IXTR20P50P

Specifications

Typical Turnon Delay Time Ns

26

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant with Exemption

Mounting

Through Hole

Montaj Stili

Through Hole

Pin Sayısı

3

Ppap

No

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

500 V

Typical Rise Time Ns

32

Kılıf / Paket

TO-247-3

Number Of Elements Per Chip

1

Id Continuous Drain Current

13 A

Typical Gate Charge10v Nc

103

Typical Gate Charge Vgs Nc

103@10V

Maximum Drain Source Resistance Mohm

490@10V

Typical Fall Time Ns

34

Configuration

Single

Maximum Drain Source Voltage V

500

Pcb Changed

3

Rds On Drainsource Resistance

490 mOhms

Minimum Operating Temperature C

-55

Channel Type

P

Channel Mode

Enhancement

Technology

Si

Material

Si

Typical Turnoff Delay Time Ns

80

Typical Input Capacitance Vds Pf

5120@25V

Supplier Package

ISOPLUS 247

Automotive

No

Maximum Continuous Drain Current A

13

Maximum Power Dissipation Mw

190000

Package Length

16.13(Max)

Package Height

21.34(Max)

Package Width

5.21(Max)

Parça Durumu

Active

Transistor Polarity

P-Channel

Maximum Operating Temperature C

150