IXTR120P20T

Specifications

Maximum Operating Temperature C

150

Process Technology

TrenchFET

Transistor Polarity

P-Channel

Eccn Us

EAR99

Package Length

16.13(Max)

Package Height

21.34(Max)

Package Width

5.21(Max)

Parça Durumu

Active

Maximum Continuous Drain Current A

90

Maximum Power Dissipation Mw

595000

Maximum Gate Threshold Voltage V

4.5

Maximum Idss Ua

25

Supplier Package

ISOPLUS 247

Automotive

No

Typical Input Capacitance Vds Pf

73000@25V

Typical Turnoff Delay Time Ns

200

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

200

Seri

IXTR120P20

Channel Type

P

Channel Mode

Enhancement

Technology

Si

Pcb Changed

3

Rds On Drainsource Resistance

32 mOhms

Maximum Drain Source Voltage V

200

Typical Fall Time Ns

50

Typical Gate Charge Vgs Nc

740@10V

Maximum Drain Source Resistance Mohm

32@10V

Configuration

Single

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

740

Id Continuous Drain Current

90 A

Kılıf / Paket

TO-247-3

Typical Rise Time Ns

85

Vds Drainsource Breakdown Voltage

200 V

Maximum Gate Source Voltage V

±15

Montaj Stili

Through Hole

Mounting

Through Hole

Ppap

No

Pin Sayısı

3