Volume pricing
- 1+ pcs$6.56
- 10+ pcs$6.18
- 100+ pcs$5.83
- 500+ pcs$5.50
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Configuration
- Single
- Terminal Kaplaması
- Matte Tin (Sn)
- Power Dissipation
- 400W
- Pcb Changed
- 3
- Transistor Application
- SWITCHING
- Typical Rise Time Ns
- 21
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Ppap
- No
- Number Of Elements
- 1
- Maximum Gate Source Voltage V
- ±20
- Avalanche Energy Rating Eas
- 1000 mJ
- Lead Shape
- Through Hole
- Drain To Source Breakdown Voltage
- 200V
- Typical Turnon Delay Time Ns
- 23
- Turn Off Delay Time
- 60 ns
- Tab
- Tab
- Ambalaj
- Tube
- Rise Time
- 21ns
- Montaj Tipi
- Through Hole
- Input Capacitance Ciss Max Vds
- 3300pF @ 25V
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Package Width
- 4.9(Max)
- Parça Durumu
- Active
- Package Length
- 15.8(Max)
- Continuous Drain Current Id
- 74A
- Fet Type
- N-Channel
- Automotive
- No
- Kurşunsuz Kodu
- yes
- JESD-609 Kodu
- e3
- Power Dissipation Max
- 480W Tc
- Maximum Continuous Drain Current A
- 74
- Pulsed Drain Currentmax Idm
- 200A
- Minimum Operating Temperature C
- -55
- Typical Turnoff Delay Time Ns
- 60
- Case Connection
- DRAIN
- Typical Gate Charge Vgs Nc
- 107@10V
- Maximum Drain Source Resistance Mohm
- 34@10V
- Qualification Status
- Not Qualified
- Typical Fall Time Ns
- 21
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