IXTQ52P10P

Specifications

Power Dissipation

300W

Pcb Changed

3

Maximum Drain Source Voltage V

100

Configuration

Single

Typical Fall Time Ns

22

Typical Gate Charge Vgs Nc

60@10V

Maximum Drain Source Resistance Mohm

50@10V

Typical Gate Charge10v Nc

60

Number Of Elements Per Chip

1

Typical Rise Time Ns

29

Maximum Gate Source Voltage V

±20

Ppap

No

Pin Sayısı

3

Mounting

Through Hole

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

22

Maximum Operating Temperature C

150

Eccn Us

EAR99

Continuous Drain Current Id

52A

Parça Durumu

Active

Package Width

4.9(Max)

Package Length

15.8(Max)

Maximum Power Dissipation Mw

300000

Maximum Continuous Drain Current A

52

Hts

8541.29.00.95

Automotive

No

Supplier Package

TO-3P

Typical Input Capacitance Vds Pf

2845@25V

Typical Turnoff Delay Time Ns

38

Channel Type

P

Channel Mode

Enhancement

Minimum Operating Temperature C

-55