IXTQ450P2

Specifications

Vgs Gatesource Voltage

- 30 V, + 30 V

Kılıf / Paket

TO-3P-3

Typical Rise Time Ns

10

Id Continuous Drain Current

16 A

Typical Gate Charge10v Nc

43

Number Of Elements Per Chip

1

Configuration

Single Dual Drain

Maximum Drain Source Resistance Mohm

330@10V

Typical Gate Charge Vgs Nc

43@10V

Typical Fall Time Ns

18

Maximum Drain Source Voltage V

500

Pcb Changed

3

Rds On Drainsource Resistance

330 mOhms

Category

Power MOSFET

Typical Turnon Delay Time Ns

16

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Tab

Tab

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Montaj Stili

Through Hole

Maximum Gate Source Voltage V

±30

Vds Drainsource Breakdown Voltage

500 V

Parça Durumu

Active

Package Width

4.9(Max)

Package Length

15.8(Max)

Transistor Polarity

N-Channel

Pd Power Dissipation

300 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Technology

Si

Channel Mode

Enhancement

Channel Type

N

Seri

IXTQ450

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Typical Turnoff Delay Time Ns

50

Typical Input Capacitance Vds Pf

2280@25V

Maks. Çalışma Sıcaklığı

+ 150 C