IXTQ44P15T

Specifications

Transistor Polarity

P-Channel

Package Length

15.8(Max)

Parça Durumu

Active

Package Width

4.9(Max)

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Process Technology

TrenchP

Typical Input Capacitance Vds Pf

13400@25V

Typical Turnoff Delay Time Ns

50

Minimum Operating Temperature C

-55

Seri

IXTQ44P15

Channel Type

P

Technology

Si

Channel Mode

Enhancement

Maximum Continuous Drain Current A

44

Maximum Power Dissipation Mw

298000

Standard Package Name

TO-3P

Supplier Package

TO-3P

Automotive

No

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

175

Id Continuous Drain Current

44 A

Kılıf / Paket

TO-3P-3

Typical Rise Time Ns

42

Rds On Drainsource Resistance

65 mOhms

Pcb Changed

3

Maximum Drain Source Voltage V

150

Typical Fall Time Ns

17

Maximum Drain Source Resistance Mohm

65@10V

Typical Gate Charge Vgs Nc

175@10V

Configuration

Single

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

25

Category

Power MOSFET

Lead Shape

Through Hole

Vds Drainsource Breakdown Voltage

150 V

Maximum Gate Source Voltage V

±15

Montaj Stili

Through Hole

Mounting

Through Hole