IXTQ44N50P

Specifications

Vgs Gatesource Voltage

- 30 V, + 30 V

Typical Rise Time Ns

27

Kılıf / Paket

TO-3P-3

Typical Gate Charge10v Nc

98

Id Continuous Drain Current

44 A

Number Of Elements Per Chip

1

Configuration

Single

Typical Fall Time Ns

21

Maximum Drain Source Resistance Mohm

140@10V

Typical Gate Charge Vgs Nc

98@10V

Rds On Drainsource Resistance

140 mOhms

Pcb Changed

3

Maximum Drain Source Voltage V

500

Category

Power MOSFET

Typical Turnon Delay Time Ns

25

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Tab

Tab

Ppap

No

Pin Sayısı

3

Montaj Stili

Through Hole

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

500 V

Maximum Gate Source Voltage V

±30

Lead Shape

Through Hole

Package Width

4.9(Max)

Parça Durumu

Active

Package Length

15.8(Max)

Transistor Polarity

N-Channel

Pd Power Dissipation

650 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Vgs Th Gatesource Threshold Voltage

5 V

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

5440@25V

Typical Turnoff Delay Time Ns

75

Maks. Çalışma Sıcaklığı

+ 150 C