IXTQ40N50L2

Specifications

Maximum Gate Source Voltage V

±20

Mounting

Through Hole

Pin Sayısı

3

Ppap

No

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

50

Category

Power MOSFET

Maximum Drain Source Voltage V

500

Pcb Changed

3

Maximum Drain Source Resistance Mohm

170@10V

Typical Gate Charge Vgs Nc

320@10V

Typical Fall Time Ns

44

Configuration

Single

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

320

Typical Rise Time Ns

133

Hts

8541.29.00.95

Maximum Continuous Drain Current A

40

Maximum Power Dissipation Mw

540000

Supplier Package

TO-3P

Automotive

No

Typical Turnoff Delay Time Ns

127

Typical Input Capacitance Vds Pf

10400@25V

Minimum Operating Temperature C

-55

Channel Type

N

Channel Mode

Enhancement

Maximum Operating Temperature C

150

Eccn Us

EAR99

Package Length

15.8(Max)

Parça Durumu

Active

Package Width

4.9(Max)