IXTQ32P20T

Specifications

Package Length

15.8(Max)

Package Width

4.9(Max)

Parça Durumu

Active

Eccn Us

EAR99

Maximum Operating Temperature C

150

Process Technology

TrenchP

Maximum Gate Source Leakage Current Na

100

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Channel Type

P

Typical Input Capacitance Vds Pf

14500@25V

Typical Turnoff Delay Time Ns

57

Supplier Package

TO-3P

Automotive

No

Maximum Continuous Drain Current A

32

Maximum Power Dissipation Mw

300000

Standard Package Name

TO-3P

Maximum Gate Threshold Voltage V

4

Maximum Idss Ua

25

Typical Rise Time Ns

15

Number Of Elements Per Chip

1

Typical Fall Time Ns

12

Maximum Drain Source Resistance Mohm

130@10V

Configuration

Single

Pcb Changed

3

Maximum Drain Source Voltage V

200

Typical Turnon Delay Time Ns

32

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Lead Shape

Through Hole

Maximum Gate Source Voltage V

±15